TITLE	Growth technology of Buffer layer toward high quality SiC substrate (Joint Program to Promote Technological Development with the Private Sectors)
AUTHOR	RITE- KYOTO UKYO LABORATORY in EcoTron CO., LTD
SOURCE
ABSTRACT	We have developed buffer layer formation technology by MSE(Metastable Solvent Epitaxy) to achieve high quality SiC substrate. This technology could reduce a propagation of defects such as micropipes from the substrate to the epitaxial layer that deteriorate electronic devices. In order to find a suitable MSE condition for the reduction of the micropipe propagation,growth temperature, liquid phase thickness and various carbon materials were examined during the epitaxial growth of the buffer layer. It was found that the higher carbon concentration in the liquid phase near the SiC substrate interface could reduce the micropipe propagation, and the reduction efficiency of the propagation became over 95%. The MSE could completely reduce a screw dislocation in every examined condition. The CVD-SiC epitaxial films on the MSE buffer layer became the same polytype as SiC substrate and epitaxial films by MSE. Furthermore, electronic device (Schottky barrier diode) using the MSE buffer layer were able to operate without any trouble. From the results above, the developed MSE buffer layer fulfills fundamental property for the buffer layer in terms of great reduction of defects and normal operation of electronic devices. We will improve the quality of buffer layer in reducing the propagation of other defects as well as that of the defects mentioned above, and confirm the effects of buffer layer on the electrical property. Finally, the technology for large substrate will be developed in the future.